Avalanche Breakdown voltage for a pn junction diode

Avalanche Breakdown voltage for a pn junction diode

Relative Permittivity of the material

Maximum electric field in the diode (Ecrit)

V/cm

Semiconductor doping in the low doped region(N_B)

×10¹⁵ cm^-3

CALCULATERESET

Result

Avalanche Breakdown voltage

where it has been assumed that the breakdown voltage is much greater than the in-built potential barrier and hence, the latter is neglected in computations.