Reverse Saturation Current Density in pn junction diode

Reverse Saturation Current Density in pn junction diode

Intrinsic carrier concentration (n_i)

×10¹⁰ cm^-3

Enter donor dopant concentration (Nd)

×10¹⁵ cm^-3

Acceptor dopant concentration (Na)

×10¹⁵ cm^-3

Relaxation time constant for the n-side (t_n0)

×10^-9 s

Relaxation time constant for the p-side (t_p0)

×10^-9 s

Relative permittivity

Diffusion coefficient for the n side (Dn)

cm²/s

Diffusion coefficient for the p side (Dp)

cm²/s

CALCULATERESET

Result

Reverse Saturation Current Density

A/cm^-2

where Lp is related to Dp and the corresponding relaxation time constant

    *Implicit are the assumptions that:

    1. The contribution of intrinsic charge carriers in total charge concentration is negligible.

    2. Wn>>Lp and Wp>>Ln

Intrinsic carrier concentration

Relative permitivitty

Mobility